rriazg125
Feb 22, 2016, 01:05 PM
In MOSFET at strong inversion electrons confined to triangular quantum well, electrons occupy only 1 or 2 lowest subbands.
And the Van Dort model gives the quantum mechanical intrinsic carrier density in inversion channel via increased energy band-gap(ΔE).
NQM = NCL× Exp(-ΔE/2kt) this carrier amount is very high.
But density of states for inversion charges in subbads reduced from the higher 3-D density to the lower 2-D density.
Then still HOW the above Van Dort's formula giving that high amount of charge..
And the Van Dort model gives the quantum mechanical intrinsic carrier density in inversion channel via increased energy band-gap(ΔE).
NQM = NCL× Exp(-ΔE/2kt) this carrier amount is very high.
But density of states for inversion charges in subbads reduced from the higher 3-D density to the lower 2-D density.
Then still HOW the above Van Dort's formula giving that high amount of charge..